Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure

Abstract

Buried-heterostructure quantum-well lasers fabricated by mass transport are reported for In0.18Ga0.82As/GaAs/Ga0.5In0.5P strained-layer structures grown by atmospheric pressure organometallic vapor-phase epitaxy. Threshold current densities as low as 85 A/cm2 are measured for broad-stripe lasers, and buried-stripe devices show threshold currents as low as 3 mA and differential quantum efficiencies as high as 34% per facet without coatings.