Preparation of microcrystalline Si1−<i>x</i>C<i>x</i> thin films

Abstract

Si1−xCx (x∼0.5) films have been prepared by glow discharge decomposition of SiH4, CH4, and H2 gas mixtures. Their structural properties are examined by infrared absorption and reflection electron diffraction. It is found that the film structure depends on the ratio of source gas to hydrogen gas [(SiH4+CH4)/H2], and microcrystalline films can be obtained even at a low temperature of 350 °C when the source gas ratio is less than 0.004.