40-GHz-bandwidth amplifier IC using AlGaAs/GaAsballistic collection transistors with carbon-dopedbases

Abstract

An fmax of 192 GHz is achieved by a ballistic collection transistor with a launcher and a heavily carbon-doped base. A two-stage direct-coupled amplifier IC fabricated using the transistors provides a high gain of 16.8 dB with a 3 dB-down frequency of 40 GHz.