Composition Control of Al_xGa_1-xAs and New Type of Superlattice by Pulsed Molecular Beam

Abstract

A new composition control method of molecular beam epitaxy is studied in Al x Ga 1- x As using a pulsed molecular beam. The AlAs mole ratio in the ternary compound is controlled by changing the duty ratio of a pulsed aluminum molecular beam. The photoluminescence shows no particular difference between the films grown by the pulsed molecular beam and a conventional-continuous molecular beam. A composition control system is made and a new type of superlattice is fabricated.