Publication | Closed Access
Effective mass and mobility of holes in strained Si/sub 1-x/Ge/sub x/ layers on
128
Citations
35
References
1992
Year
Materials ScienceEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsValence BandsEffective MassSemiconductor MaterialMultilayer HeterostructuresSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsSemiconductor Device
The directional density-of-state effective masses of the valence bands of a strained Si/sub 1-x/Ge/sub x/ layer for the
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