Publication | Open Access
Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well
22
Citations
25
References
2005
Year
Categoryquantum ElectronicsEngineeringOptoelectronic DevicesEnergy Level CalculationsSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorQuantum MaterialsDrastic RenormalizationCompound SemiconductorQuantum ScienceDouble QuantumPhysicsQuantum DeviceCategoryiii-v SemiconductorQuantum MagnetismSpintronicsNatural SciencesApplied PhysicsCondensed Matter PhysicsQuantum DevicesTopological Heterostructures
We report on design, fabrication, and magneto-optical studies of a III-V/II-VI hybrid structure containing a $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}∕\mathrm{Zn}\mathrm{Se}∕\mathrm{Zn}\mathrm{Cd}\mathrm{Mn}\mathrm{Se}$ double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitating penetration of the electron wave function from the diluted magnetic semiconductor ZnCdMnSe QW into the nonmagnetic GaAs QW, and vice versa. Magneto-photoluminescence studies demonstrate level anticrossing and strong intermixing resulting in a drastic renormalization of the electron effective $g$ factor, in perfect agreement with the energy level calculations.
| Year | Citations | |
|---|---|---|
Page 1
Page 1