Japanese Journal of Applied Physics · 2010 · 22 citations · 25 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDopingLight-emitting DiodesOptoelectronic DevicesQuantum WellsSemiconductor Device MaterialsSemiconductor PhysicsBlue Light EmissionBlue Light-emitting DiodesExternal Quantum EfficiencyLight-emitting DevicesMetalorganic Chemical Vapor DepositionPower OutputQuantum EfficiencyQuantum Well Structures
The device structures of semipolar (1011) GaN blue light emitting diodes (LEDs) were optimized to achieve high power and high efficiency via metalorganic chemical vapor deposition (MOCVD). The quantum well (QW) width, barrier thickness and last barrier (LB) thickness were varied in order to optimize device performances and achieve the best growth conditions. Additional optimization methods such as Mg doping for the LB and p+ contact layers were also investigated. This study resulted in a LED with an output power of 22.75 mW and an external quantum efficiency (EQE) of 39.5% at a driving current of 20 mA, which is a significant improvement over previous results.
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