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Homoepitaxial growth of 4H-SiC on on-axis C-face substrates by chemical vapor depositon

Materials EngineeringMaterials ScienceEngineeringOn-axis C-face SubstratesSurface ScienceApplied PhysicsChemical Vapor DepositonSemiconductor Device FabricationMolecular Beam EpitaxyEpitaxial GrowthChemical Vapor DepositionCarbideHomoepitaxial Growth