A 5V-only EEPROM with internal program/erase control

Abstract

An 8K×8 EEPROM, using double-poly, silicon gate, nitrox technology, will be described. A 176μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> cell size has been achieved with 3μ design rules. Internal high voltage generation and program/erase control provides 5V-only external interfacing.