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Four-wave mixing in semi-insulating InP and GaAs using the photorefractive effect

165

Citations

14

References

1984

Year

Abstract

The photorefractive effect has been observed for the first time in semi-insulating InPe:Fe and GaAsCr. These materials are sensitive and versatile recording media for high bit rate parallel optical processing in the 0.8–1.8-μm spectral region using injection lasers of milliwatt power levels.

References

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