Publication | Closed Access
Large memory window and good retention characteristics of ferroelectric-gate field-effect transistor with Pt/Bi<sub>3.4</sub>Ce<sub>0.6</sub>Ti<sub>3</sub>O<sub>12</sub>/CeO<sub>2</sub>/Si structure
10
Citations
22
References
2011
Year
EngineeringFerroelectric Random-access MemoryThin Film Process TechnologySemiconductor DeviceFerroelectric ApplicationLarge Memory WindowMemory DeviceMemory DevicesAbstract Bi 4−Ferroelectric-gate Field-effect TransistorTi 3Materials ScienceElectrical EngineeringGood Retention CharacteristicsOxide ElectronicsElectronic MemoryInsulator LayerApplied PhysicsSemiconductor MemoryThin Films
Abstract Bi 4− x Ce x Ti 3 O 12 ( x = 0.0, 0.4, 0.6 and 1.0) ferroelectric-thin films were fabricated by chemical solution deposition. Among these thin film samples, Bi 3.4 Ce 0.6 Ti 3 O 12 (BCT) exhibits the best ferroelectric property. An n -channel metal–ferroelectric–insulator–silicon (MFIS) ferroelectric-gate field-effect transistor (FeFET) with Pt/BCT/CeO 2 /Si structure was fabricated and characterized. Due to the relatively good interface properties between the insulator layer (CeO 2 ) and ferroelectric-gate layer (BCT), the device shows a nearly unchanged memory window of about 3.2 V after a 24 h retention test and a field-effect mobility of approximately 24.6 cm 2 V −1 s −1 . These results suggest that the Pt/BCT/CeO 2 /Si FeFET is suitable for high-performance ferroelectric memory application.
| Year | Citations | |
|---|---|---|
Page 1
Page 1