Publication | Closed Access
Very high electron mobilities at low temperatures in InxGa1−xAs/InyAl1−yAs HEMTs grown lattice-mismatched on GaAs substrates
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Citations
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References
1999
Year
Semiconductor TechnologyElectrical EngineeringLow TemperaturesEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsInxga1−xas/inyal1−yas HemtsCompound SemiconductorHigh Electron Mobilities
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