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High Precision Measurements of the Quantized Hall Resistance at the PTB
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1985
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Wide-bandgap SemiconductorQuantum ScienceElectrical EngineeringPrecision MeasurementEngineeringSemiconductor DevicePhysicsNanoelectronicsApplied PhysicsQuantum MaterialsCondensed Matter PhysicsQuantized HallTopological Quantum StateMicroelectronicsSi MosfetSample TemperatureQuantized Hall ResistanceHigh Precision Measurements
Quantized Hall resistances in GaAs-GaAlAs heterostructures and Si MOSFET's have been investigated. The influence of the sample temperature, the step number, and the material was found to be less than 3 parts in 108.
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