Annealing in a mercury bath of In+ and B+ implanted Cd0.23Hg0.77Te studied by resonant Raman scattering and Hall effect measurements

Abstract

Resonant Raman scattering by longitudinal optical phonons has been used to study the effect of annealing in a hot Hg bath on 113In+ and 11B+ implanted Cd0.23Hg0.77Te. Up to the highest doses of 1×1013 cm−2 for In and 1×1014 cm−2 for B, respectively, Raman spectroscopy indicates a full recovery of the crystalline perfection for annealing temperatures around 320 °C and annealing times ≥10 min. This recovery is accompanied by an electrical activation of the implants. Control experiments have been carried out to prove that the electrical activity is not due to residual lattice damage and that the immersion in the Hg bath by itself has no effect on the Raman spectrum.