Identification of single and coupled acceptors in silicon nano-field-effect transistors

Abstract

We performed dopant mediated hole transport measurements to identify the depth position of individual boron acceptors and investigate two-acceptor coupling in silicon-on-insulator nanoscale field-effect transistors at a temperature of 6K. The depth position is qualitatively obtained from the analysis of the acceptor-to-gate capacitances. We also observe signatures of a two-acceptor capacitive coupling in the characteristics of the conductance versus the front and back gate voltages.