Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications

TLDR

BiFeO₃ thin films were grown on SrRuO₃/SrTiO₃ and SrRuO₃/SrTiO₃/Si substrates via liquid‑delivery metalorganic chemical vapor deposition. Optimized BiFeO₃ films exhibited a single perovskite phase with ferroelectric switching of 110–120 µC cm⁻² and out‑of‑plane piezoelectric coefficient d₃₃ of 50–60 pm V⁻¹, while composition control revealed Bi‑rich and Fe‑rich mixtures containing β‑Bi₂O₃ and α‑Fe₂O₃, respectively.

Abstract

We have grown BiFeO3 thin films on SrRuO3∕SrTiO3 and SrRuO3∕SrTiO3∕Si using liquid delivery metalorganic chemical vapor deposition. Epitaxial BiFeO3 films were successfully prepared through the systematic control of the chemical reaction and deposition process. We found that the film composition and phase equilibrium are sensitive to the Bi:Fe ratio in the precursor. Fe-rich mixtures show the existence of α-Fe2O3, while Bi-rich mixtures show the presence of β-Bi2O3 as a second phase at the surface. In the optimized films, we were able to obtain an epitaxial single perovskite phase thin film. Electrical measurements using both quasistatic hysteresis and pulsed polarization measurements confirm the existence of ferroelectricity with a switched polarization of 110–120μC∕cm2, ΔP(=P*−P̂). Out-of plane piezoelectric (d33) measurements using an atomic force microscope yield a value of 50–60pm∕V.