Applied Physics Letters · 1989 · 74 citations · 20 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsSurface ScienceEpitaxial GrowthSemiconductor DefectsSemiconductor InterfacesSemiconductor SurfacesSurface CrystallographySurface PhysicsLine DefectsMolecular Beam EpitaxyRutherford ScatteringSilicon DioxideSubstrate Surface Preparation
Single-crystal type B CoSi2 thin layers have been grown on Si(111) by codeposition at room temperature. The existence of a good quality CoSi2 template layer on the surface prior to the codeposition is essential. This requirement can be satisfied by either an annealed CoSi2 thin layer or by a small amount of cobalt deposited at room temperature. The topography of the original substrate surface has a predominant effect on the structure of line defects at the CoSi2 interface formed at room temperature. Results obtained from transmission electron microscopy and Rutherford backscattering are presented.
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R. T. Tung, J. M. Poate, J. C. Bean et al. · Thin Solid Films · 1982 · 215 citations
Growth of single-crystal CoSi2 on Si(111)
R. T. Tung, J. C. Bean, J. M. Gibson et al. · Applied Physics Letters · 1982 · 201 citations