Photoluminescence dead layer in <i>p</i>-type InP

Abstract

Photoluminescence intensity of p-type InP Schottky diodes was measured as a function of excitation wavelength for several values of applied bias. The intensity increases with penetration depth of the excitation radiation and is quantitatively consistent with a nonradiating surface dead layer. The dead-layer thickness is somewhat less than the diode depletion width, but has the same functional dependence on applied bias.