The <i>C</i> 3Π–<i>X</i> 3Π band system of the SiC radical

Abstract

We report a study of the C 3Π–X 3Π band system of the SiC radical. Jet-cooled SiC is produced by a laser vaporization/pulsed beam source and is probed by pulsed laser-induced fluorescence excitation spectroscopy. Vibrational term energies and rotational constants are determined for v′=0–8 of the C state and for v″=0–5 of the X state. The spectroscopic constants for the C state are Te=22 830.4(9) cm−1, ωe=615.7(8) cm−1, and re=1.919(3) Å; for the X state, ωe=965.16(24) cm−1 and re=1.7182(2) Å.