Ultra-low-capacitance flip-chip-bonded GaInAs PIN photodetector for long-wavelength high-data-rate fibre-optic systems

Abstract

A novel GaInAs substrate illuminated photodetector structure is reported for the 1.0–1.7 μm wavelength range with capacitance as low as 0.02 pF, packaging stray capacitance below 0.02 pF, 97% quantum efficiency and subnanoampere leakage current. The device is rugged, epoxy-free, does not use an integral fibre pig-tail and wire bonding to the detector chip is not required.