Extremely low surface recombination velocity in GaInAsSb∕AlGaAsSb heterostructures

Abstract

Low surface recombination velocity is critical to the performance of minority carrier devices. Minority carrier lifetime in double heterostructures (DHs) of 0.53-eV p-GaInAsSb confined with 1.0-eV p-AlGaAsSb, and grown lattice-matched to GaSb, was measured by time-resolved photoluminescence. The structures were designed to be dominated by the heterointerface while minimizing the contribution of photon recycling to minority carrier lifetime. Surface recombination velocity as low as 30cm∕s for DHs was achieved. This value is over an order of magnitude lower than that reported in previous studies.