The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating

Abstract

The growth of a single crystal of 3C-SiC on a Si substrate by the MBE method has been performed. A single-crystal film can be grown at a substrate temperature T sub =1150°C. This temperature is relatively low compared to that used in other methods. The diffused Si from a substrate plays an important part in the crystal growth of SiC, especially for a very thin film. The individual intensity of Si and C molecular beams ( J Si and J C ) and their intensity ratio J Si / J C should be selected with suitable values in accordance with the film thickness, considering the growth condition of the MBE method.