Thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy

Abstract

We studied the thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy targeting a thermoelectric device with a high electron mobility. For InSb on sapphire, the maximum power factor (Pf) was 3.5×10−3W∕mK at 723K, and for InSb on SiO2 glass, the maximum Pf was 2.4×10−3W∕mK at 723K. For Ga0.03In0.97Sb on sapphire, the maximum Pf was 2.5×10−3W∕mK at 723K, and for Ga0.03In0.97Sb on SiO2 glass, the maximum Pf was 3.4×10−3W∕mK at 723K.