Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium

Abstract

Physical properties of bis(2,4-dimethylpentadienyl)ruthenium were compared with those of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium . showed a high vapor pressure of 13.3 Pa at 82°C and a decomposition temperature of 210°C, which is 60°C lower than that of . Metallic Ru film was deposited on oxidized from a system in a deposition temperature range from 220 to 400°C by metallorganic chemical vapor deposition (MOCVD), and crystalline metallic Ru films with smooth surfaces were deposited down to 220°C for the first time from a system.