Japanese Journal of Applied Physics · 1996 · 10 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectrochemistryElectronic MaterialsSensorsCurrent-voltage CharacteristicsGas SensorsMetal-semiconductor ContactsQuantum TunnelingCurrent-voltage CharacterizationCurrent-voltage RelationsElectronic ConductionFowler-nordheim TunnelingTemperature DependenceTunnel JunctionsTunneling ConductionTunneling Current
The conduction mechanism of an Al–Al 2 O 3 –Pd MIM (metal-insulator-metal) junction which can operate as a hydrogen gas sensor was investigated using the logarithmic derivative of the current curve, Fowler-Nordheim plot and temperature dependence of the junction current. Al–Al 2 O 3 –Pd junctions showed current-voltage characteristics typical of tunneling conduction at voltages above 3 V. The barrier height of the Pd-Al 2 O 3 contact obtained from the position of the logarithmic derivative maximum of the current was 3.4 eV in vacuum, and decreased to 2.7 eV upon introduction of 40 Pa hydrogen. On the other hand, the barrier height of the Al–Al 2 O 3 contact was 1.8 eV in vacuum and was unchanged even when 40 Pa of hydrogen gas was introduced.
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A hydrogen−sensitive MOS field−effect transistor
Ingemar Lundström, Shriram Shivaraman, C. Svensson et al. · Applied Physics Letters · 1975 · 735 citations
Schottky Emission Through Thin Insulating Films
P. R. Emtage, W. Tantraporn · Physical Review Letters · 1962 · 241 citations