Publication | Open Access
Charge state dependence of channeled ion energy loss
58
Citations
18
References
1981
Year
EngineeringSilicon CrystalCharge TransportIon ProcessEnergy LossesSemiconductorsIon EmissionSolid-state IonicElectrical EngineeringPhysicsCrystalline DefectsIon ChannelsAtomic PhysicsQuantum ChemistryCharge State DependenceNatural SciencesApplied PhysicsCondensed Matter PhysicsElectrophysiologyIon Structure
The charge state dependence of channeled ion energy loss has been determined for a series of ions ranging from fluorine to chlorine along the $〈110〉$ direction in a silicon crystal. Energy losses for both bare ions and ions partially clothed with bound electrons at $\frac{E}{A}\ensuremath{\cong}3$ MeV/amu have been measured. The energy-loss rate for bare ions follows a strict ${Z}_{1}^{2}$ scaling and agrees reasonably well with quantal perturbation calculations without the need for polarization or Bloch corrections. An explanation for this result is discussed. The clothed-ion energy losses appear to demonstrate screening effects that agree qualitatively with simple estimates. The angular dependence of the observed energy-loss effects is also presented.
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