Physical Review Letters · 2003 · 85 citations · 18 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOpticsPhotonicsElectron-phonon InteractionsElectronic Band StructureLaser PhysicsNonlinear OpticsOptical Properties Of SolidsSemiconductor LasersElectronic TransitionsIntersubband TransitionsPhononsQuantum Well LasersQuantum Well StructuresStokes ShiftStrong CouplingStrong Coupling Effects
Intersubband lasing at $12--16\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$ based on a ${\mathrm{C}\mathrm{O}}_{2}$ laser pumped stimulated resonant Raman process in $\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ three-level double-quantum-well structures is reported. The presence, or lack of, lasing action provides evidence for resonantly coupled modes of collective electronic intersubband transitions and longitudinal optical phonons. An anticrossing behavior of these modes is clearly seen when the difference between the pump and lasing energies (i.e., Stokes Raman shift) is compared with the subband separation. This work reveals the significance of the strong coupling between intersubband transitions and phonons and raises a new possibility of realizing a phonon ``laser.''
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Jérôme Faist, Federico Capasso, Deborah L. Sivco et al. · Science · 1994 · 4.5K citations
Ultra-broadband semiconductor laser
Claire Gmachl, Deborah L. Sivco, R. Colombelli et al. · Nature · 2002 · 258 citations