Signal magnitudes in high density ferroelectric memories

Abstract

Abstract We review several issues affecting the signal delivered to a sense-amp in high density ferroelectric nonvolatile memories. Typical DRAM parameters are used to approximate the expected signal and to determine constraints on ferroelectric properties. These calculations pertain to memories which are destructively read and which use either a 1T/1C (one cell per bit) or a 2T/2C (two cells per bit) architecture.