Electronics Letters · 2012 · 45 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsClass F AmplifiersClass F Power AmplifiersCurrent-voltage RelationshipGallium Nitride Power AmplifiersHigh-efficiency Power AmplifiersPower Amplifier DesignPower Amplifier NonlinearityRadio Frequency Power Amplifiers
The similarity between RF power amplifiers and rectifiers is discussed. It is shown that the same high-efficiency harmonically-terminated power amplifier can be operated in a dual rectifier mode. Nonlinear simulations with a GaN HEMT transistor model show the time-reversal intrinsic voltage and current waveform relationship between a class-F amplifier and rectifier. Measurements on a class-F−1 amplifier and rectifier at 2.14 GHz demonstrate over 80% efficiency in both cases.
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