The Relationship between Resistivity and Boron Doping Concentration of Single and Polycrystalline Diamond

Abstract

Temperature dependent resistivity and Hall measurements have been carried out on in situ boron doped polycrystalline diamond films. The temperature dependence of the resistivity can be described by a two band conduction model with two conduction mechanisms working parallel. A fair agreement between the depth distribution of the boron concentration determined from spreading resistance and secondary ion mass spectroscopy is found. Room temperature resistivities and activation energies from various sources are compared with the present work. With the aid of these curves the doping and hole concentrations can be estimated from room temperature resistivity measurements.