Effect of Al Incorporation in the Thermal Stability of Atomic-Layer-Deposited HfO[sub 2] for Gate Dielectric Applications

Abstract

The thermal stability in structural and electrical properties of , alloy, and stack thin films prepared by atomic layer deposition were comparatively investigated. Both and exhibit improved property against thermal degradation compared to the film. However, the incorporation of Al in alloy form provides characteristics superior to that in stack structure by retaining an amorphous structure up to 1000°C, which suppresses the leakage current and retards the growth of interfacial layer giving rise to lower increment of equivalent-oxide-thickness and interface trap density.