High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method

Abstract

The hot wire (HW) cell method has been newly developed and successfully applied to grow polycrystalline silicon films at low temperatures with a relatively high growth rate of 0.9–1.1 nm/s. In the HW cell method, mono silane (SiH 4 ) is decomposed by reacting with a heated tungsten wire placed near the substrate. It is found that polycrystalline silicon films can be obtained at substrate temperatures of 175–400°C without hydrogen dilution when the deposition pressure is 0.1 Torr.