Preparation of Cu₂ZnSnS₄ thin films by sulfurization of co‐electroplated Cu‐Zn‐Sn precursors

Abstract

Abstract Cu 2 ZnSnS 4 (CZTS) thin films were prepared by sulfurization of electrodeposited Cu‐Zn‐Sn precursors. The Cu‐Zn‐Sn precursors were deposited on Mo‐coated glass substrates in a one‐step process from an electrolyte containing copper (II) sulfate pentahydrate, zinc sulfate heptahydrate, tin (II) chloride dehydrate and tri‐sodium citrate dehydrate. The precursors were sulfurized by annealing with sulfur at temperatures of 580 °C and 600 °C in an N 2 atmosphere. X‐ray diffraction peaks attributable to CZTS were detected in the sulfurized films. Photovoltaic cells with the structure glass/Mo/CZTS/ CdS/ZnO:Al/Al were fabricated using the CZTS films by sulfurizing the electrodeposited precursors. The best photovoltaic cell performance was obtained with Zn‐rich samples. An open‐circuit voltage of 540 mV, a short‐circuit current of 12.6 mA/cm 2 and an efficiency of 3.16% were achieved. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)