Ion implantation of iodine into silicon carbide: Influence of temperature on the produced damage and on the diffusion behaviour - Concepedia

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Ion implantation of iodine into silicon carbide: Influence of temperature on the produced damage and on the diffusion behaviour

36

Citations

10

References

2008

Year

A. Audren, A. Benyagoub, L. Thomé, F. Garrido

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Materials EngineeringMaterials ScienceIon ImplantationEngineeringApplied PhysicsSilicon CarbideDiffusion BehaviourCarbideMicrostructure

References

	Year	Citations

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