Electron and hole drift mobility in amorphous silicon

Abstract

Electron and hole drift mobility have been measured in n- and p-type amorphous Si Schottky-barrier solar cells. At room temperature μdn= (2–5) ×10−2 cm2/V sec and μdp= (5–6) ×10−4 cm2/V sec. Both mobilities are trap controlled with ΔE=0.19 eV for electrons and ΔE=0.35 eV for holes above 250 °K and ΔE=0.16 and 0.26 eV, respectively, below 250 °K. Majority-carrier lifetimes are estimated to be 1 μsec for electrons and 25 μsec for holes.