300 GHz Integrated Heterodyne Receiver and Transmitter With On-Chip Fundamental Local Oscillator and Mixers

TLDR

Prior integrated receivers and transmitters above 200 GHz did not incorporate on‑chip local oscillators and fundamental‑mode mixers, limiting system simplicity. This study introduces a 300 GHz integrated heterodyne receiver and transmitter that includes on‑chip local oscillators and mixers operating at fundamental mode. Fabricated in a 250 nm InP DHBT process, the receiver integrates a 300 GHz RF amplifier, balun, down‑conversion mixer with IF amplifier, and on‑chip LO on a single chip, while the transmitter adds an up‑conversion mixer to the.

Abstract

A 300 GHz integrated heterodyne receiver and transmitter for wideband communication and imaging applications have been developed in a 250 nm InP double-heterojunction bipolar transistor (DHBT) process. The receiver integrates a 300 GHz RF amplifier with a balun, a down-conversion mixer with an IF amplifier, and a local oscillator, all on a single chip. The transmitter is composed of the identical circuit blocks of RF amplifier and oscillator in addition to an up-conversion mixer. Compared to previous integrated receivers and transmitters reported at above 200 GHz, the proposed work includes the on-chip local oscillator and mixers operating at a fundamental mode. This simplifies the system architecture, thus not only reducing the chip area and DC consumption but also improving the RF performance such as high conversion gain, low spurious levels, and low noise figure. The receiver exhibits a peak conversion gain of 26 dB at 298 GHz, 3-dB bandwidth of 20 GHz, and noise figure of 12.0-16.3 dB at IF frequency from 1.1 to 7.7 GHz. The transmitter exhibits peak conversion gain of 25 dB, 3 dB bandwidth of 18 GHz, and output power of -2.3 dBm. The DC power consumption of the receiver and transmitter are 482 and 452 mW, respectively.