On the long-term stability of Cd<i>x</i>Hg1−<i>x</i>Te at 300 K

Abstract

Recently reported changes in the characteristics of bulk CdxHg1−xTe material stored open for periods of years at 300 K can be explained by the cross diffusion of Hg in the presence of interstitial-vacancy concentration gradients and/or surface exchange with the ambient. These mechanisms are thought to be inoperative in working photoconductive devices fabricated from such materials.