Journal of Physics D Applied Physics · 2013 · 12 citations · 17 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsElectronic Material CharacterizationPolymer Thin FilmsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film DepositionThin-film MaterialsBack Contact MaterialsChalcogenide Thin FilmsFilm Growth MechanismsThin-film Growth Mechanisms
In this work, Cu(In,Ga)Se2 (CIGS) absorbers were deposited on polyimide substrates using the low-temperature three-stage process, and different sodium incorporation methods were applied to investigate the effects of Na on the CIGS growth. It was found that Na affected the CIGS film growth significantly during the second stage of the process, and resulted in a higher Ga content near the back contact. The CIGS thin films with different Na-incorporation methods exhibited similar electrical parameters. A modelling investigation was also implemented by using the wxAMPS software package to quantitatively analyse the effects of different Ga gradient to the device characteristics. Finally, the device performance showed little difference between the post-deposition treatment of NaF and the co-evaporation of NaF during the third stage.
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