Effect of deposition variables on the chemical vapor deposition of TiC using propane

Abstract

TiC was deposited onto cemented tungsten carbide by a chemical vapor deposition from a TiCl4–H2–C3H8 gas mixture in a horizontal resistance furnace. The deposition rate and the surface morphology of the coatings were investigated with mC/Ti, deposition temperature and total deposition pressure. Deposition rate is maximum at the mC/Ti value of about 0.9 and deposition of TiC is possible in the temperature range 850–950 °C at atmospheric pressure. By reducing the total pressure, the possible temperature range for the reaction is enlarged. The theoretical deposition efficiency and the supersaturation of reactants can also be enhanced by reducing the total pressure, which results in fine and uniform crystal size distributions. The preferred orientation of the TiC deposits is (200).