Optical Engineering · 2004 · 38 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLight SourcesLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesPhotonic Device SimulationPhotonic Integrated CircuitsExtraction EfficiencyGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight ExtractionLight Extraction EfficiencyLight-emitting Diode Materials
An optical model for simulating light extraction efficiency of a GaN-based LED chip is presented. We propose the introduction of a periodic sharpening structure on the interface between the sapphire and the n-GaN of a GaN-based LED to obtain as high as 78% light extraction efficiency.
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Michael R. Krames, Mari Ochiai-Holcomb, G. E. Höfler et al. · Applied Physics Letters · 1999 · 454 citations