Physical Review Letters · 1976 · 76 citations · 9 references
Natural SciencesChemistryPhysicsCondensed Matter PhysicsPhysical ChemistrySemiconductor MaterialsCompound SemiconductorsIi-vi SemiconductorsOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor Device MaterialsSemiconductor PhysicsExciton Binding EnergyExcitonsOptical AbsorptionOptical Absorption CoefficientOptical Absorption SpectraOptical Gain In SemiconductorsOptoelectronic Properties
Measurements of optical absorption and gain in CdS and gain in CdSe show that for high excitation density optically excited carriers form an electron-hole liquid with binding energy of 13 meV for CdS and 2 meV for CdSe. The measurements are compared to a recent theory for electron-hole liquid formation in polar semiconductors.
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Electron-Hole Liquids in Semiconductors
W. F. Brinkman, T. M. Rice · Physical review. B, Solid state · 1973 · 474 citations
Optical gain in semiconductors
K. L. Shaklee, R. E. Nahory, R. F. Leheny · Journal of Luminescence · 1973 · 353 citations
Radiative Recombination in Highly Excited CdS
Claude Benoit à la Guillaume, Jean-Marie Debever, F. Salvan · Physical Review · 1969 · 337 citations
Natural Sciences, Physics, Optics +16
Exciton-Exciton Interaction in CdS, CdSe, and ZnO
Douglas Magde, H. Mahr · Physical Review Letters · 1970 · 115 citations