Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots

R. León, Yong Kim, C. Jagadish et al. · Applied Physics Letters · 1996 · 262 citations

Engineering, Materials Science, Physics +16

Tuning self-assembled InAs quantum dots by rapid thermal annealing

Surama Malik, Christine Cardinal Roberts, Ray Murray et al. · Applied Physics Letters · 1997 · 241 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots

Shijie Xu, X. C. Wang, S. J. Chua et al. · Applied Physics Letters · 1998 · 190 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

A. O. Kosogov, P. Werner, U. Gösele et al. · Applied Physics Letters · 1996 · 150 citations

Natural Sciences, Materials Engineering, Materials Science +17

Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

T. M. Hsu, Yuemei Lan, Wen‐Hao Chang et al. · Applied Physics Letters · 2000 · 82 citations

Natural Sciences, Materials Science, Physics +17