Formation of Ba-ferrite films with perpendicular magnetization by targets-facing type of sputtering

Abstract

Ba-ferrite films have been prepared by means of Targets-Facing type of sputtering method which is very useful to prepare magnetic films at high rate without any bombardment of high energy particles such as γ-electrons and negative ions emitted from the targets and is favorable to obtain stoichiometric films of good quality. C-axis orientation of the films depends strongly on substrate temperature and crystal structure of substrate. C-axis well oriented BaM films are deposited on amorphous materials such as a-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> . The deposited films of 3000 Å in thickness have ΔΘ <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">50</inf> less than 1 degree, magnetic anisotropy constant of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3.2\times10^{6}</tex> erg/cc, saturation magnetization of 380 emu/cc and coercive force of 1.3 kOe. These films reveal much better c-axis orientation and surface smoothness than the films deposited by DC diode type of sputtering method and have almost the same composition as that of the targets.