Applied Physics Letters · 2004 · 27 citations · 12 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMagnetic MaterialsNanotechnologyFerromagnetic MaterialsMagnetic OxidesMagnetism In SolidsQuantum TunnelingSpintronic MaterialsSpintronicsBarrier LayersMagnetic Tunnel JunctionsMagnetic Tunneling JunctionsMagnetoresistanceThermal StabilityThin Oxide LayersTunnel JunctionsTunnel Magnetoresistance
We developed two types of magnetic tunnel junctions (MTJs) that showed high thermal stability. One is a PtMn exchange-biased spin-valve MTJ with a CoFe/Al-oxide (AlOx)/NiFe free layer and a CoFeTaOx/CoFe pinned layer, and the other is a pseudo-spin-valve (PSV) MTJ with a CoFe/AlOx/NiFe soft layer, where AlOx and CoFeTaOx act as barriers for Ni and Mn diffusion toward the tunnel barrier, respectively. After 390 °C-1H annealing, the PSV MTJs maintained 28% and the SV MTJs 39% of tunnel magnetoresistance. Transmission electron microscopy observation of the SV MTJs after 380 °C-1H annealing revealed that the migrated Mn atoms were trapped at the CoFeTaOx layer.
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Microstructured magnetic tunnel junctions (invited)
W. J. Gallagher, S. Parkin, Yu Lu et al. · Journal of Applied Physics · 1997 · 449 citations
Natural Sciences, Materials Engineering, Materials Science +17