Electronics Letters · 1976 · 124 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCharge Carrier TransportMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsSemiconductor PhysicsThermal Properties Of SemiconductorsCarrier Tunneling Across InterfacesSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersSchottky ContactsSiliconThermally Grown Oxides
It is shown that current transport through Schottky barriers formed by Pd on n-type silicon with a thin thermally grown oxide is sensitive to hydrogen in the ambient. It is shown that a transition from minority- to majority-carrier dominated current occurs with increasing hydrogen pressure.
5
A hydrogen−sensitive MOS field−effect transistor
Ingemar Lundström, Shriram Shivaraman, C. Svensson et al. · Applied Physics Letters · 1975 · 735 citations