IEEE Microwave and Wireless Components Letters · 2005 · 15 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesDetector TechnologyHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor DetectorsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesDynamic RangeGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsMicrowave Detector DesignPlanar DetectorsSchottky Barrier DiodesSemiconductor Radiation Detectors
Tangential signal sensitivity (TSS) of GaAs planar doped barrier (PDB) detector diodes as low as -55 dBm at 35 GHz has been achieved. In comparison with that of reported devices, this value is 6-dBm better, implying the diodes can detect much lower power hence widening the dynamic range of microwave/millimeter-wave power detectors.
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Microwave solid state circuit design
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Planar-doped barriers in GaAs by molecular beam epitaxy
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Asymmetric planar doped barrier diodes for mixer and detector applications
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I. Dale, A. Condie, S. Neylon et al. · IEEE MTT-S International Microwave Symposium digest · 2003 · 16 citations