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Quasi‐normally‐off AlGaN/GaN HEMTs fabricated by fluoride‐based plasma treatment
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Citations
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References
2007
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideQuasi‐normally‐off Algan/gan HemtsGan Power DeviceFluoride‐plasma TreatmentThermal Stability TestCategoryiii-v SemiconductorOptoelectronicsAlgan Barrier Layer
Abstract Quasi‐normally‐off AlGaN/GaN HEMTs have been fabricated by fluoride‐based plasma treatment. SIMS measurement showed an incorporation of fluorine atoms in the AlGaN barrier layer. In the capacitance DLTS measurements of the n‐AlGaN, a new peak with an activation energy of 1.51 eV appeared for the sample with fluoride‐plasma treatment. The threshold voltage did not change for the thermal stability test at 200 °C for more than 80 days. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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