On the mechanism of dissipation of energy released in the capture of charge carriers to adsorptive slow states of a semiconductor

Abstract

The influence is investigated of H2O, D2O, CH3OH, CCI4, C6,H14, NH3, and p-benzoquinone molecules on the kinetics of charge exchange of slow states in the field effect on the germanium surface in the temperature range 250 to 320 K. The results obtained indicate that the molecules weakly sorbed on the semiconductor surface “stimulate” the capture of free charge carriers to slow traps. It is shown that this effect is due to a more rapid dissipation of energy released in the capture events through excitation of the high-energy vibrational modes of adsorbed molecules. The causes of the abnormally small cross sections for capture of charge carriers by slow surface states are discussed.