Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field

Abstract

Bringing an elastomeric phase mask into conformal contact with a layer of photoresist makes it possible to perform photolithography in the near field of the mask. This technique provides an especially simple method for forming features with sizes of 90–100 nm in photoresist: straight lines, curved lines, and posts, on both curved and planar surfaces. It combines experimental convenience, new optical characteristics, and applicability to nonplanar substrates into a new approach to fabrication. Nanowire polarizers for visible light illustrate one application for this technique.