Applied Physics Letters · 1988 · 21 citations · 8 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsElectron-phonon InteractionsElectronic Band StructureElectronic Transport ModelingSemiconductor DefectsSemiconductor PhysicsWide-bandgap Semiconductor DevicesCarrier-phonon CouplingDeformation Potential TheoryElectron-electron InteractionsElectron-phonon ScatteringPhononsScatteringTight-binding ModelsTight-binding Theory
The coupling constants for the intervalley scattering of electrons by acoustic and optical phonons are calculated based on empirical tight-binding band structures. The calculated intravalley and intervalley scattering rates based on these deformation potentials, polar optical phonon, impurity, and electron-electron interactions successfully explain the observed ratio of collector-to-emitter current as a function of injected electron energy in a GaAs hot-electron transistor.
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